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mmrf2005n MMRF2005GN 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifiers the mmrf2005n wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 mhz. this multi--stage structure is rated for 24 to 32 v operation and is ideal for applications including radio communications, data links and uhf radar. driver application ? 900 mhz ? typical single--carrier w--cdma performance: v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency (1) g ps (db) pae (%) acpr (dbc) 920 mhz 36.6 16.1 ?48.0 940 mhz 36.8 16.7 ?48.7 960 mhz 36.6 17.3 ?48.6 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 48 w cw output power (3 db input overdrive from rated p out ) driver application ? 700 mhz ? typical single--carrier w--cdma performance: v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 728 mhz 36.4 16.1 ?47.7 748 mhz 36.4 16.1 ?47.8 768 mhz 36.4 16.0 ?47.9 features ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked, > 5 ohm output) ? integrated quiescent current te mperature compensation with enable/disable function (2) ? integrated esd protection document number: mmrf2005n rev. 0, 8/2015 freescale semiconductor technical data 728?960 mhz, 3.2 w avg., 28 v rf ldmos wideband integrated power amplifiers to--270wb--16 plastic mmrf2005n to--270wbg--16 plastic MMRF2005GN mmrf2005n MMRF2005GN (top view) gnd nc rf in v gs1 gnd rf out /v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 quiescent current temperature compensation (2) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 nc nc nc nc note: exposed backside of the package is the source terminal for the transistors. figure 1. functional block diagram figure 2. pin connections gnd gnd 1. 900 mhz driver frequency band table data collected in the 900 mhz application circuit. see fig. 9. 2. refer to an1977 , quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987 , quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf and search for an1977 or an1987. ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 3.2 w cw, 940 mhz stage 1, 28 vdc, i dq1 = 106 ma stage 2, 28 vdc, i dq2 = 285 ma case temperature 80 ? c, 30 w cw, 940 mhz stage 1, 28 vdc, i dq1 =40ma stage 2, 28 vdc, i dq2 = 340 ma r ? jc 5.5 1.6 5.8 1.2 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b, passes 500 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) ii, passes 200 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 1 ? on characteristics gate threshold voltage (v ds =10vdc,i d =14 ? adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1 = 106 ma) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i dq1 = 106 ma, measured in functional test) v gg(q) 6.9 9.4 11.9 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. v gg =3.3 ? v gs(q) . parameter measured on freescale test fixture, due to resistor divider network on the board. refer to test circuit schematic. (continued)
mmrf2005n MMRF2005GN 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 2 ? on characteristics gate threshold voltage (v ds =10vdc,i d =74 ? adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 285 ma) v gs(q) ? 2.6 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i dq2 = 285 ma, measured in functional test) v gg(q) 4.2 5.9 7.6 vdc drain--source on--voltage (v gs =10vdc,i d = 740 ma) v ds(on) 0.1 0.3 0.8 vdc functional tests (2,3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., f = 940 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth carrier, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 33 35.9 38 db power added efficiency pae 14 16.5 ? % adjacent channel power ratio acpr ? ?49.5 ?46 dbc input return loss irl ? ?18.7 ?9 db typical performance ? 900 mhz (in freescale 900 mhz application test fixture, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, 920?960 mhz bandwidth v dd =28vdc,i dq1 =40ma,i dq2 = 340 ma p out @ 1 db compression point, cw p1db ? 31 ? w imd symmetry @ 25 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 45 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 80 ? mhz quiescent current accuracy over temperature (4) with3k ? gate feed resistors (?30 to 85 ? c) ? i qt ? 0.02 ? % gain flatness in 40 mhz bandwidth @ p out =3.2wavg. g f ? 0.2 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.036 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.01 ? dbm/ ? c table 6. ordering information device tape and reel information package mmrf2005nr1 r1 suffix = 500 units, 44 mm tape width, 13--inch reel to--270wb--16 MMRF2005GNr1 to--270wbg--16 1. v gg =2.25 ? v gs(q) . parameter measured on freescale test fixture, due to resistor divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. 3. measurements made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts. 4. refer to an1977 , quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987 , quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf and search for an1977 or an1987.
4 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN figure 3. mmrf2005n test circui t component layout ? 900 mhz cut out area r1 c1 c2 c3 c4 c5 c6 c7 c8 c10 c11 c12 c13 c14 c15 c16 c17 c18 c9 r2 r3 r4 r5 r6 v dd2 v dd1 v gg2 v gg1 r7 table 7. mmrf2005n test ci rcuit component designati ons and values ? 900 mhz part description part number manufacturer c1, c4, c7 47 pf chip capacitors atc600f470jt250xt atc c2, c5, c8 10 nf, 50 v chip capacitors c0603c103j5rac--tu kemet c3, c6 1 ? f, 50 v chip capacitors grm21br71h105ka12l murata c9, c15 10 ? f, 50 v chip capacitors grm55dr61h106ka88l murata c10 16 pf chip capacitor atc100b160jt500xt atc c11 6.2 pf chip capacitor atc100b6r2bt500xt atc c12 7.5 pf chip capacitor atc100b7r5ct500xt atc c13, c14 47 pf chip capacitors atc100b470jt500xt atc c16, c17 100 ? f, 50 v electrolytic capacitors mcgpr35v337m10x16--rh multicomp c18 0.5 pf chip capacitor atc100b0r5bt500xt atc r1, r2, r3, r4, r5, r6 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r7 0 ? , 3a chip resistor crcw12060000z0ea vishay pcb 0.020 ? , ? r =3.5 rf--35 taconic
mmrf2005n MMRF2005GN 5 rf device data freescale semiconductor, inc. typical characteristics ? 900 mhz irl, input return loss (db) 800 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 3.2 watts avg. ?26 ?18 ?20 ?22 ?24 33.5 38.5 38 37.5 ?50 20 18 16 14 ?40 ?42 ?44 ?46 pae, power added efficiency (%) g ps , power gain (db) 37 36.5 36 35.5 35 34.5 34 825 850 875 900 925 950 975 1000 12 ?48 ?28 parc parc (db) ?1.5 0.5 0 ?0.5 ?1 ?2 acpr (dbc) figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?60 ?10 ?20 ?30 ?50 1 100 imd, intermodulatio n distortion (dbc) ?40 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 25 w (pep), i dq1 = 106 ma i dq2 = 285 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) ?1 ?3 ?5 5 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 2 814 10 46 40 34 28 22 16 pae, power added efficiency (%) 11 acpr acpr (dbc) ?50 ?26 ?30 ?34 ?42 ?38 ?46 37.5 g ps , power gain (db) 37 36.5 36 35.5 35 34.5 g ps pae probabilit y on ccdf i dq2 = 285 ma, single--carrier w--cdma v dd =28vdc,p out =3.2w(avg.),i dq1 = 106 ma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pae ?1 db = 6.41 w ?2 db = 8.98 w ?3 db = 12.17 w parc v dd =28vdc i dq1 = 106 ma i dq2 = 285 ma f = 940 mhz single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf
6 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN typical characteristics ? 900 mhz figure 7. broadband frequency response 10 40 450 f, frequency (mhz) v dd =28vdc p in = ?10 dbm i dq1 = 106 ma i dq2 = 285 ma 30 25 20 550 gain (db) 35 gain 650 750 850 950 1050 1150 1250 irl ?30 0 ?5 ?10 ?15 ?20 irl (db) 15 ?25 table 8. series equivalent input and load impedance ? 900 mhz f mhz z in ? z load ? 820 37.95 + j2.31 4.70 + j0.98 840 39.95 + j2.72 4.29 + j1.23 860 42.70 + j1.02 3.93 + j1.67 880 44.40 ? j1.38 3.63 + j2.15 900 46.25 ? j4.92 3.41 + j2.61 920 45.70 ? j8.41 3.14 + j3.05 940 45.46 ? j11.47 2.94 + j3.48 960 45.07 ? j15.19 2.85 + j3.90 980 43.49 ? j18.03 2.69 + j4.32 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z in z load device under test output matching network
mmrf2005n MMRF2005GN 7 rf device data freescale semiconductor, inc. load pull characteristics ? 900 mhz table 9. load pull performance v dd =28vdc, i dq1 = 106 ma, i dq2 = 285 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) p1db p3db watts dbm watts dbm 920 43 46.3 51 47.1 940 42 46.3 50 47 960 42 46.3 50 47 note: load pull test fixture tuned for peak p1db output power @ 28 v test impedances per compression level f (mhz) z source ? z load ? 920 p1db 55.82 + j15.71 4.54 + j1.15 940 p1db 52.56 + j20.20 4.38 + j1.21 960 p1db 49.18 + j25.00 5.04 + j1.15
8 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN 900 mhz application circuit table 10. 900 mhz performance (in freescale application circuit, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf frequency (mhz) g ps (db) pae (%) acpr (dbc) 920 36.6 16.1 ?48.0 940 36.8 16.7 ?48.7 960 36.6 17.3 ?48.6 1 p out , output power (watts) avg. figure 8. single--carrier w--cdma power gain, power added efficiency and acpr versus output power ?10 ?20 33 38 0 60 54 48 42 36 pae, power added efficiency (%) g ps , power gain (db) 37.5 37 10 50 ?50 acpr (dbc) 36.5 36 35.5 0 ?30 ?40 ?45 ?5 ?15 ?25 ?35 35 34.5 35 33.5 34 acpr 960 mhz v dd =28vdc i dq1 = 106 ma, i dq2 = 285 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf pae 920 mhz 940 mhz 960 mhz 920 mhz 960 mhz 940 mhz 920 mhz g ps 30 24 18 12 6
mmrf2005n MMRF2005GN 9 rf device data freescale semiconductor, inc. figure 9. mmrf2005n test circui t component layout ? 700 mhz cut out area r1 c1 c2 c3 c4 c5 c6 c7 c8 c10 c11 c12 c13 c14 c15 c16 c17 c18 c9 r2 r3 r4 r5 r6 v dd2 v dd1 v gg2 v gg1 r7 table 11. mmrf2005n test circuit compone nt designations and values ? 700 mhz part description part number manufacturer c1, c4, c7 47 pf chip capacitors atc600f470jt250xt atc c2, c5, c8 10 nf, 50 v chip capacitors c0603c103j5rac kemet c3, c6 1 ? f, 50 v chip capacitors grm21br71h105ka12l murata c9, c15 10 ? f, 50 v chip capacitors grm55dr61h106ka88l murata c10 13 pf chip capacitor atc100b130jt500xt atc c11 7.5 pf chip capacitor atc100b7r5ct500xt atc c12 6.8 pf chip capacitor atc100b6r8ct500xt atc c13, c14 47 pf chip capacitors atc100b470jt500xt atc c16, c17 100 ? f, 50 v electrolytic capacitors mcgpr35v337m10x16--rh multicomp c18 1.8 pf chip capacitor atc100b1r8bt500xt atc r1, r2, r3, r4, r5, r6 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r7 0 ? , 3a chip resistor crcw12060000z0ea vishay pcb 0.020 ? , ? r =3.5 rf--35 taconic
10 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN typical characteristics ? 700 mhz 1 p out , output power (watts) avg. figure 10. single--carrier w--cdma power gain, power added efficiency and acpr versus output power ? 700 mhz ?10 ?20 32.5 0 60 54 48 42 36 pae, power added efficiency (%) g ps , power gain (db) 37.5 37 10 50 18 ?50 acpr (dbc) 36.5 36 35.5 0 ?30 ?40 ?45 ?5 ?15 ?25 ?35 35 34.5 33.5 34 acpr v dd =28vdc i dq1 = 106 ma, i dq2 = 285 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf pae 728 mhz 748 mhz g ps 33 24 30 12 6 768 mhz 728 mhz 748 mhz 748 mhz 768 mhz 728 mhz table 12. series equivalent input and load impedance ? 700 mhz f mhz z in ? z load ? 710 25.21 ? j1.21 8.57 + j2.52 720 33.76 + j5.36 8.52 + j2.46 730 38.78 + j1.40 8.44 + j2.34 740 40.14 ? j0.76 8.36 + j2.16 750 35.46 ? j1.15 8.30 + j2.00 760 34.65 ? j0.53 8.32 + j1.90 770 34.75 ? j0.43 8.31 + j1.86 780 36.20 + j0.81 8.27 + j1.98 790 36.18 + j1.33 8.23 + j2.12 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z in z load device under test output matching network
mmrf2005n MMRF2005GN 11 rf device data freescale semiconductor, inc. package dimensions
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mmrf2005n MMRF2005GN 17 rf device data freescale semiconductor, inc. product documentation and software refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2015 ? initial release of data sheet
18 rf device data freescale semiconductor, inc. mmrf2005n MMRF2005GN information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mmrf2005n rev. 0, 8/2015

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